Abstract
In this paper, we demonstrate industrially feasible large-area solar cells achieving energy conversion efficiency up to 21.63% on p-type boron doped multicrystalline Si wafers. Advanced light trapping, passivation and hydrogenation technology are used to achieve excellent light absorption with very low surface recombination velocity. The bulk lifetime of the multi-crystalline Si wafers used for the fabrication exceeds 500 μs after optimized gettering and hydrogenation processes. The high bulk lifetime and excellent surface passivation enable Voc to exceed 670 mV. The metallization process is carried out by screen printing and firing in a conventional belt furnace. Detailed performance parameters and quantum efficiency of the cells will be illustrated in the paper. In addition, free energy loss analysis and cell simulation are also performed using the control parameters measured during cell fabrication processes.
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