Abstract
The test structure was fabricated for fatigue test under arbitrary stress ratio and TEM observation at the same time. A silicon thin film specimen with a notch, which was made of SOI wafer, was designed for stress concentration factor 3.3. Fatigue tests were expected to be performed under arbitrary stress ratio with PZT actuator controlled by function generator. The process of the defect which causes fatigue failure is expected to be defined by the fatigue test the observation in TEM at the same time. In order to fully understand fatigue behavior of silicon, further detailed study would be essential to identify what the defects are and how they are structured with tensile stress component to grow into larger defects to determine the fatigue lifetime.
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