Abstract
Material removal mechanism in CMP process is complicated phenomena and it is difficult to analyse quantitatively because of combined chemical and mechanical processes. Recent analysis on CMP material removal is based on the action of fine particles in slurry. However, it is considered that particles work on wafer surface equally, thus material removal on wafer surface occurs uniformly and it is difficult to predict material removal distribution on wafer surface. For analysis of material removal distribution on wafer surface, variation of polishing distance generated by the motion of CMP machine structure and machine motion conditions has to be considered. On the report, the influence on polishing distance for material removal in CMP process is investgated.
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