Abstract
This paper shows analysis of stress in inter-connected structures made by dual-damascene method during planarizing processes by CMP (Chemical Mechanical Polishing). Mechanical properties and dimensions in the future generations of inter-connected structures are analyzed. Von Mises equivalent stresses are calculated by Finite Element Method under down-forces and frictions of CMP processes. The results of analysis show that maximum stress is observed at the intermediate positions of vias and depends on the Young's modulus of the Low-k material. However, the maximum stress in vias at the 32 nm-node is only three times as large as the stress at the 90 nm-node.
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