2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off.

Abstract

In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm2 along with a red-shift of the peak position from 624.69 to 627.12 nm (Δλ = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output.