Abstract
The tunnel injection transit time (Tunnett) diode is expected to be the useful solid state device, because it can be operated with lower bias voltage than that of the Impatt, and with extremely low noise level in the wavelength region from millimeter to submillimeter. This paper describes the recent results of the GaAs Tunnett diode with p+ -n and p+ -n-n+ structure prepared by a new liquid phase epitaxial growth method (temperature difference method under controlled vapor pressure) and the improvement of the device fabrication technique. The fundamental oscillation frequency from 110 to 208 GHz has been obtained and the lowest pulsed input power for the oscillation was 2.1 W.
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