Abstract

Spectral response of solar cells determines the output performance of the devices. In this work, a 20.0% efficient silicon (Si) nano/microstructures (N/M‐Strus) based solar cell with a standard solar wafer size of 156 × 156 mm2 (pseudo‐square) has been successfully fabricated, by employing the simultaneous stack SiO2/SiNx passivation for the front N/M‐Strus based n+‐emitter and the rear surface. The key to success lies in the excellent broadband spectral responses combining the improved short‐wavelength response of the stack SiO2/SiNx passivated Si N/M‐Strus based n+‐emitter with the extraordinary long‐wavelength response of the stack SiO2/SiNx passivated rear reflector. Benefiting from the broadband spectral response, the highest open‐circuit voltage (Voc) and short‐circuit current density (Jsc) reach up to 0.653 V and 39.0 mA cm−2, respectively. This high‐performance screen‐printed Si N/M‐Strus based solar cell has shown a very promising way to the commercial mass production of the Si based high‐efficient solar cells.

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