2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si

Abstract

AbstractFirst results are presented of a study on the impact of O and Ge doping on {113}‐defect formation in Si using in situ 2 MeV e‐irradiation in a high voltage electron microscope. Comparison with undoped Si, reveals a suppression of {113}‐defect formation due to O and Ge. The observations are discussed in the frame of a theoretical model assuming quasi‐chemical reactions to describe the intrinsic point defect behaviour during irradiation as a function of irradiation temperature and specimen thickness. It is shown that for irradiations at high temperatures, intrinsic point defect diffusivity values derived from crystal growth and metal diffusion experiments can be used to explain the observations semi‐quantitatively.