Abstract
A Si bipolar 2 Gbit/s 16×16 high-speed space-division-switch LSI is described. High-speed operation of 2 Gbit/s and low-power dissipation of 2.8 W are achieved by adopting a new expandable structure, a very low voltage swing-differential bipolar circuit design and a super self-aligned process technology (SST-1A). This LSI is applicable to future B-ISDN HDTV switching systems.
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