Abstract
A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current.
Highlights
Attracting a lot of attention in recent years are the III-nitride wide band-gap semiconductors (GaN, AlN, ...) and their alloys, has become the basis of an advanced, microwave-power-device technology for several reasons
The relation between the kink effect and existing deep centers has been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current
A peculiar feature of GaN-based transistors with the wurtzite crystal structure is the formation of a two-dimensional electron gas (2DEG) at the AlGaN/GaN heterointerface, due, mainly to spontaneous and piezoelectric polarizations, high sheet carrier concentrations of 1013 cm−2 have been obtained in AlGaN/GaN high electron mobility transistors (HEMT’s), which make them meet the demands of high-power devices [3,4]
Summary
Attracting a lot of attention in recent years are the III-nitride wide band-gap semiconductors (GaN, AlN, ...) and their alloys, has become the basis of an advanced, microwave-power-device technology for several reasons. GaN has a breakdown field of 20 MV/cm [1], which is larger than that of GaAs (4 MV/cm) and Si (3 MV/cm), and a high peak electron velocity [2] of 3 × 107 cm/s as compared to 2 × 107 cm/s of GaAs and Si. A peculiar feature of GaN-based transistors with the wurtzite crystal structure is the formation of a two-dimensional electron gas (2DEG) at the AlGaN/GaN heterointerface, due, mainly to spontaneous and piezoelectric polarizations, high sheet carrier concentrations (ns) of 1013 cm−2 have been obtained in AlGaN/GaN HEMT’s, which make them meet the demands of high-power devices [3,4]. AlGaN/GaN high electron mobility transistors (HEMTs), have received much attention for high-power and high frequencies applications because of a high breakdown field in the wide-band gap semiconductors are capable of the high temperature applications [5,6].
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