Abstract
Abstract Using angle-dispersive diffraction techniques and synchrotron radiation, we have made a detailed re-examination of the high-pressure behaviour of a number of core II-VI, III-V and group IV semiconductors. Despite much previous work on these materials, the good resolution afforded by angle-dispersive techniques, and the high-sensitivity of the image-plate area detector have yielded many new results which reveal that the accepted structural systematics have to be modified quite substantially. In this paper, we summarise the newly emerging structural systematics, and use the results to show how access to full 2-d powder patterns has proved essential in determining correct crystal structures.
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