Abstract
In this paper, we have developed a 2-D analytical model for the surface potential and threshold voltage of a tunneling field-effect transistor (TFET) with localized charges in the oxide. These charges are generated in the oxide due to hot carrier effects in the channel. The models are derived by dividing the channel into damaged and undamaged regions and then solving the 2-D Poisson's equation in these regions. The threshold voltage is then extracted by using constant current method. The proposed models are verified by using 2-D device simulations. The model can be used to study the impact of localized charges on the threshold voltage of a TFET for varying device dimensions and charge densities and can also be utilized to design TFET-based charge trapped memory devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
