Abstract
Abstract Silicides are used as ohmic contacts to silicon-based devices, and as rectifying contacts in some applications. The formation of the silicide is essential for the electrical properties as well as the long-term stability of the contact. In this paper we describe the use of surface resistance measurements to identify silicide formation. This parameter was determined as a function of temperature and duration of heat treatment, for layers of Pd, Pt and Rh deposited on Si crystals. The four-point-probe technique was used. Apart from identification of the silicide, we also found that increased annealing decreased the surface resistance of a formed silicide.
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