Abstract
Abstract : This paper presents low noise amplifier (LNA) for wireless application as RF front end which has been implemented in 0.13μ RF CMOS technology. The LNA was designed using inductive source degeneration cascode topology which produces better gain and good stability. From the simulation results, the LNA exhibits a gain of 26.46 dB, noise figure (NF) of 1.16 dB at 115μW , output return loss (S22) of −6.55dB, input return loss (S11) of −14.46dB, reverse isolation (S12) of −39.76 dB, and a power consumption is 7 mA from a 2.5V power supply.
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