Abstract
We present fabrication results of a planar-buried-heterostructure (PBH)-type reflective semiconductor optical amplifier (R-SOA). Active and passive waveguides forming R-SOA were integrated by butt-coupling. The optical gain and 3 dB amplified spontaneous emission (ASE) bandwidth were about 25 dB and 35 nm, respectively. The polarization-dependent gain (PDG) was about 0.8 dB. We could obtain a clearly opened eye diagram under 2.5 Gbps direct modulation. In a bit-error-rate (BER) test, the receiver sensitivity and power penalty after 20 km transmission were about -27 dBm and 2 dB, respectively.
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