Abstract
In this study, we designed and fabricated a 20-W internally matched gallium nitride(GaN) high-electron-mobility transistor(HEMT) power amplifier for an electronic warfare jammer in the frequency band of 2.5～6 GHz. The CGH60030D GaN HEMT from Wolfspeed was used as an amplifying device, and lossy matching was applied. An input series resistor that was used at the gate side for wideband matching reduced the amplifier’s low-frequency gain and minimized high-frequency loss in the design frequency band. Input and output matching circuits were implemented on two different substrates whose relative dielectric constants were 40 and 9.8, respectively. The fabricated internally matched power amplifier showed a linear gain of approximately 11.5 dB, a power-added efficiency of 35.6～40.5 %, and a power gain of 7.2～8.8 dB at an output power of 20 W from 2.5 to 6 GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
