Abstract
A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the V gs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm P sat, 28.2 dBm P 1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
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