2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성

Abstract

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(Idss), an extrinsic transconductance(gm) of 1,090 mS/mm and a threshold voltage(Vth) of −0.65 V. The fT and fmax obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).