Abstract
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
Highlights
In recent R&D efforts on CMOS image sensors (CIS), there have been many attempts to reduce pixel size for higher image resolution and/or higher density of integration
This paper presents a 1T pixel using a floating-body MOSFET
For reset operation, the stored charges can be evacuated by bias control. We describe this 1T pixel structure and its operating principle (Section 2)
Summary
In recent R&D efforts on CMOS image sensors (CIS), there have been many attempts to reduce pixel size for higher image resolution and/or higher density of integration. Sensors 2009, 9 is to minimize the number of in-pixel transistors. This has led to architectural explorations instead of accepting 3 T and 4 T pixel structures as standard. There have been suggestions of specific transistor structures as single pixel component working on the charge-modulation principle [4,5,6]. This paper presents a 1T pixel using a floating-body MOSFET. Instead of employing a photodiode (PD), the transistor is operated as photo-sensing device, with its floating body to collect and store charges during integration. For reset operation, the stored charges can be evacuated by bias control. We describe this 1T pixel structure and its operating principle (Section 2).
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