1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs

Abstract

In this letter, we propose one-transistor ferroelectric NOR type (Fe-NOR) non-volatile memory based on HfZrOx ferroelectric FETs (FeFETs). The enhanced drain-channel coupling in ultra-short channel FeFETs is utilized to dynamically modulate the memory window of storage cells, thereby resulting in simple erase-, program-, and read-operations. The simulation analysis predicts sub-1V program/erase voltages in the proposed Fe-NOR memory array and, therefore, presents a significantly lower power alternative to conventional FeRAM and NOR flash memories.