Abstract
1J2-5 Evaluation of Oxygen Precipitates in Si Wafer by Resonance Ultrasound Microscopy(Measurement techniques, Imaging, Nondestructive evaluation II)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings of Symposium on Ultrasonic Electronics
Paper Title
Journal
Date
