1/f noise in MOS transistors due to number or mobility fluctuations

Abstract

Some experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for the two schools of thought about the origin of 1/f noise. The consequences of models based on number or mobility fluctuations on the device geometry and on the bias dependence of the 1/f noise are discussed. The correlation or lack of correlation between degradation effects by hot carriers or by irradiation on one hand and the 1/f noise on the other hand is considered in terms of a ΔN or Δμ.