Abstract
In this article, we have demonstrated 1-eV energy band gap In0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1eV. The structures of In0.22GaAsNy/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsNy/GaAs MQW solar cells is extended over 1300nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29mA/cm2.
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