Abstract
1D and 2D Field Effect Transistors in Gas Sensing In article number 2206100, Giuseppe Barillaro and co-workers review the whole assortment of 1D (metal oxide semiconductors, silicon nanowires, carbon nanotubes) and 2D (graphene, transition metal dichalcogenides, phosphorene) materials used in field effect transistor (FET) gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical vs. sensing properties, then pointing out weakness and highlighting future directions.
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