1D (1-Dimensional) Si P-N Junction with Organic Materials and Transparent Conductive Oxides (TCOs) Alternatives

Abstract

Organic Materials have been recently used as an alternative for semiconductors in the fabrication of solar cells. The proposed organic materials as an active material are PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2ethyl-hexyl)-4H-cyclopenta[2,1-b:3,4 b']dithiophene2,6diyl]]), P3HT (Poly(3-hexylthiophene 2,5-diyl)) and PC61BM ([6,6]-Phenyl-C61-butyric acid methyl ester) because of their non-linear optical properties, easy fabrication techniques and low cost. Transparent Conducting Oxides (TCOs) are used in photovoltaics and optical devices for its low electrical resistance. In addition, TCOs do not have many losses for propagated light. The metric for the comparative study between materials is the insertion losses for a 500 nm wavelength source along with these materials. The material that has better performance should have a low insertion loss. In this paper, a study was conducted on the behavior of acceptors concentration, Shockley-Read-Hall (SRH) recombination, I-V, and P-V characteristics on a 1D Si P-N junction. The numerical solutions for insertion losses and 1D Si P-N junction are carried out by LUMERICAL and COMSOL software, respectively. At a depth of 100 nm, PC61BM has a better performance over PCPDTBT and P3HT with Insertion losses (IL) of 3.07 dB and 2.76 dB for TE and TM mode, respectively. For TCOs materials. The behavior of insertion losses on Indium Tin Oxide (ITO), Gallium doped Zinc Oxide (GZO), and Aluminum doped Zinc Oxide (AZO) is traced. At a depth of 100 nm, the insertion losses are minimized by AZO and ITO with a magnitude of 1.91 dB and 1.87 dB for TE mode, respectively, while 1.45 dB for TM mode.