Abstract
Vertical Si p-MOSFETs with channel lengths of 100 nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called VOXFET, reduces gate to source/drain overlap capacitances, thus improving high speed applications. Transistors with a gate width of 12 /spl mu/m and gate oxide thickness of 10 nm show transconductances g/sub m/ of 200 mS/mm and measured cutoff frequencies of f/sub T/=8.7 GHz and f/sub MAX/=19.2 GHz.
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