Abstract
A novel systematic technological process for ZnO-thin-film transistors (TFTs) fabrication was developed which turned out to achieve near-zero threshold voltage devices with good performance and stability. A deuterium implantation method was realised as well to fabricate depletion n-type ZnO TFTs. The inverters based on enhancement/depletion ZnO TFTs reached nearly full swing (0.01–5 V at 5 V VDD) and pretty large noise margin (VNML = 1.01 and VNMH = 3.61 V). Moreover, a transparent radio-frequency identification (RFID) tag chip based on ZnO TFTs was developed. This tag with an anti-collision algorithm for ISO-14443 type-A was first realised under 5 µm ZnO-TFT technology. The proposed RFID tag exhibits ultra-low-power dissipation of <19.5 µW at 3 V VDD and a reasonable chip area of 4.7 mm2.
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