Abstract
AbstractUsing a suitable dilution process at PECVD improves quality of gate nitride and a‐Si:H channel at low temperature. By using suitable Ar dilution in gate nitride and H2 dilution in a‐Si:H channel, the low temperature a‐Si:H TFTs have not only similar channel mobility and threshold voltage, but also similar stress induced threshold voltage shift as usual a‐Si:H TFTs.
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