Abstract
The morphological evolution of a strained heteroepitaxial thin film of Si_<1-x>Ge_x/Si during deposition has been investigated by two-dimensional phase-field simulations. The developed phase-field model can create the facet morphologies which are modeled using the generalized gradient correction coefficient for a crystal with a high anisotropy of surface energy, and can simulate the sequence of shape transitions which is well known in Si_<1-x>Ge_x/Si(001) system: 2D wetting layer, faceted 3D pyramids, and multifaceted domes. The effects of Ge composition, mobility for phase field and deposition rate on the island formation process and the island evolutions have been studied here. Some typical and important phenomena observed, in previous experimental studies, during Si_<1-x>Ge_x/Si(001) heteroepitaxy have been able to simulate by the developed phase-field model.
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