Abstract
AbstractThis paper reports a power amplifier (PA) terahertz monolithic integrated circuit (TMIC) from 180 to 240 GHz. This amplifier is fabricated from a 0.5‐μm indium phosphide double heterojunction bipolar transistor (InP DHBT) technology, jointly with a thin‐film microstrip wiring environment. Furthermore, an electromagnetic (EM) simulation method is proposed for the parameter extraction of InP DHBTs and amplifier design. This five‐stage amplifier has >6.1 dB S21 gain from 180 to 240 GHz, peaks 10.4 dB S21 gain at 210 GHz. At 213 GHz operation, the saturated output power is 5.8 dBm with 7.3 dB large‐signal gain, and this amplifier occupies 2.52 mm2 including pads.
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