Abstract

A robust hole transporting layer (HTL), using the cost-effective Cobalt(II) acetate tetrahydrate (Co(OAc)2 ⋅4 H2 O) as the precursor, was simply processed from its aqueous solution followed by thermal annealing (TA) and UV-ozone (UVO) treatments. The TA treatment induced the loss of crystal water followed by oxidization of Co(OAc)2 ⋅4 H2 O precursor, which increased the work function. However, TA treatment differently realize a high work function and ideal morphology for charge extraction. The resulting problems could be circumvented easily by additional UVO treatment, which also enhanced the conductivity and lowered the resistance for charge transport. The optimal condition was found to be a low temperature TA (150 °C) followed by simple UVO, where the crystal water in Co(OAc)2 ⋅4 H2 O was removed fully and the HTL surface was anchored by substantial hydroxy groups. Using PM6 as the polymer donor and L8-BO as the electron acceptor, a record high PCE of 18.77 % of the binary blend OSCs was achieved, higher than the common PEDOT:PSS-based solar cell devices (18.02 %).

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