1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

Abstract

A novel 1.7kV IGBT with deep floating-p layers separated from trench gates has been developed to realize low loss, low EMI noise, and high reliability. Separating floating-p layers from the trench gates reduces excess V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GE</sub> overshoot, which results in a 51% smaller reverse recovery dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AK</sub> /dt than the conventional IGBT. The deep floating p-layers weaken the electric field under the trenches, which results in an avalanche breakdown voltage of 2250V. In addition, the E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> + E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> for the proposed structure can be reduced by 47% more than that of the conventional one, maintaining a low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE(sat)</sub> of 2.3V at 125°C.