Abstract
It is very important to grasp the stress states in micro scale area because of the increase of the reliability of advanced materials. In this study, Raman micro spectroscopy was applied to the measurement of the crystallographic orientation and stresses in the single crystal sapphire or polycrystalline alumina. For the crystallographic orientation, the change of the Raman intensity at 418cm^<-1> line with the angleφ was used in order to determine the direction of the c-axis, because this wave number was strongly related to the c-axis of alumina. Where φ is the angle among the c-axis and the direction of the polarized laser. The determined angle by Raman micro spectroscopy was nearly equal to the results obtained by EBSP method. In addition, the stress measurement around the notch root in the single crystal sapphire was conducted, and the two components of the strains, ε_x and ε_y, were determined. ε_y is the strain parallel to the c-axis corresponding to the change of Raman peak shift of 418cm^<-1> line, ε_x is the strain perpendicular to the c-axis, and is related to Raman spectrum 645cm^<-1>. The measured strains were good agreement with the FEM results. Therefore, strains in the region where the strain gradient was very large, were able to be measured by Raman micro spectroscopy.
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