Abstract
Light Emitting Diode (LED) 칩의 크기는 전도를 통한 열의 방출에 있어 면적의 확대로 인한 열 밀도의 감소와 칩의 외부양자효율 변화로 인하여 LED 칩의 p-n 정션 온도와 패키지의 열 저항에 영향을 미친다. 본 연구에서는 16칩 LED 패키지에서 칩의 크기가 0.6 mm와 1 mm인 두 가지 경우에 대하여 순전압(forward voltage)을 측정하였고, 순간열분석법(thermal transient analysis)을 이용하여 정션 온도와 열 저항을 평가하였으며, 이를 LED 칩의 전기적인 특성과 LED 패키지의 구조적인 특성과 연관하여 해석하였다. p-n junction temperature and thermal resistance of Light Emitting Diode (LED) package are affected by the chip size due to the change of the thermal density and the external quantum efficiency considering the heat dissipation through conduction. In this study, forward voltage was measured for two different size LED chips, 24 mil and 40 mil, which consist constitute 16-chip package. p-n junction temperature and thermal resistance were determined by thermal transient analysis, which were discussed in connection with the electrical characteristics of the LED chip and the structure of the LED package.
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