16 GHz bandwidth MSM photodetector and 45/85 GHz fT/fmax HEMT prepared on an identical InGaAs/InP layer structure

Abstract

An MSM photodetector and a HEMT prepared on an identical InGaAs/InP layer structure are demonstrated for the first time. A 150 nm undoped InGaAs layer is inserted above the 2DEG to enhance the photodetector responsivity, and a bandwidth of 16 GHz is achieved. On the same wafer, processed HEMTs show optimal high frequency performance with an fT of 45 GHz and an fmax of 85 GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high performance and low cost.