Abstract
AbstractThis study reported a low temperature polycrystalline silicon LTPS thin film transistor TFT fabrication process on plastic substrates for flexible display applications. Polycrystalline silicon poly‐Si films were formed by excimer laser annealing ELA method. It was found by ELA thermal simulation that there was around 70 □ on plastic surface during ELA crystallization process. The excimer laser irradiated film was analyzed by using various spectroscopic methods such as X‐ray diffraction, scanning electron microscopy, and atomic force microscopy. Dehydrogenation and activation processes were performed by a conventional LTPS method without causing any plastic substrate distortion. The fabricated poly‐Si TFT on a flexible backplane shows a very good performance with field effect mobility of 95.3 cm2/Vs, on/off ratio current ratio > 108, and threshold voltage of −1.6 V. Bending tests after a delamination process were also performed with TFT backplane samples.
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