Abstract
1.5 μm-wavelength narrow stripe distributed reflector (DR) lasers consisting of first-order vertical grating (VG) and distributed Bragg reflector (DBR) mirrors were realized by deeply etching the as-grown wafer and passivating the etched surface by SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Design consideration, fabrication, and lasing performances were studied. A low threshold current of 2.8 mA and a differential quantum efficiency of 28% from the front facet were achieved for a 1.3 μm stripe width and a 150 μm cavity length under room temperature (RT) continuous wave (CW) operation. Details of threshold behavior of these lasers are presented. Lasing performances of FP and DBR lasers are also described for comparison.
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