Abstract
Fluoropolymers are key materials for the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential for use as the base resins of 157-nm photoresists, and have developed a monocyclic fluorinated polymer with a protecting group of bicyclohexylyloxymethyl (BCHYOM) that has high transmittance (an absorption coefficient of 0.64 µm-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate ratio to that of the KrF resist of 1.75) under organic bottom anti-reflective coating (BARC) / hard mask (HM) dry-etching conditions. Moreover, this polymer has a higher dissolution rate contrast than the polymers with other protecting groups that we evaluated. After exposure using a 157-nm laser microstepper (numerical aperture = 0.85) and our monocyclic-fluoropolymer-based resist with a protecting group of BCHYOM, a 65-nm line-and-space pattern was obtained when using a 150 nm film thickness. We found that this polymer simultaneously enables high transparency, high dry-etching resistance, and good imaging performance.
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