Abstract
A 1.55 μm spot-size converter integrated-laser diode (SSC–LD) with a vertically tapered-thickness waveguide was fabricated by using selective-area metalorganic vapor-phase epitaxy (MOVPE). A tapered-thickness profile and PL wavelength shift as large as 238 nm in the waveguide were obtained by using an exponentially tapered shape mask. The SSC–LD exhibited a high slope efficiency of 0.31 W/A and a beam divergence of 6.9°×12.4° without facet coating. The coupling loss between the LD and SMF was measured to be 2.76 dB, and the 1 dB alignment tolerances were ±2.4 μm for the horizontal direction, ±2.0 μm for the vertical direction, and 13 μm for the longitudinal direction. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 300–302, 2000.
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