Abstract
We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.
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