Abstract
Erbium-doped amorphous gallium–arsenic–nitrogen (a-GaAsN) films have been prepared by cosputtering from a crystalline GaAs wafer partially covered with metallic Er pieces. The films were deposited at room temperature under different partial pressures of Ar and N2. After deposition, the films were characterized by optical transmission in the visible-ultraviolet energy range, photoluminescence (PL) in the infrared region, and Raman scattering spectroscopy. Compositional measurements were also performed indicating an Er content of ∼0.5 at. % and a N concentration that scales with the N2 partial pressure during deposition. According to the experimental results, to higher N contents correspond larger optical band gaps and more intense Er3+-related PL signals. This dependence is analyzed in terms of the compositional, electronic, and structural characteristics of each film.
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