Abstract
The state of the art for a planar doped pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As HEMT with a gate length of 0.1 µm is presented. The devices exhibit an extrinsic and intrinsic transconductance of 1070 and 1510 mS/mm, respectively, a maximum current density of 550 mA/mm and a peak current gain cutoff frequency of 220 GHz. These results are the highest ever reported for HEMTs fabricated on GaAs substrates.
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