Abstract
1.5 /spl mu/m wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.
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