Abstract
MOVPE epitaxial growth and design optimisation of 1.5 μm vertical cavity surface emitting lasers (VCSELs) for high power, single mode and high-temperature operation are presented. The VCSEL structure comprises a strain-compensated InAlGaAs MQW active region, a p ++/n ++ In(Al)GaAs tunnel junction and top and bottom AlGaAs/GaAs fused distributed Bragg reflectors. All epitaxial layers were grown by low-pressure MOVPE in nitrogen atmosphere. Excellent optical and electrical confinement is obtained by wafer-bonding of the top mirror on tunnel junction pre-etched mesas. Devices with 7 μm aperture show single transverse mode CW operation up to 4 mW at room temperature, with 30–35 dB side-mode suppression ratio and a far field divergence angle of 9°. At 85 °C, a record single mode high emission power up to 1.7 mW is demonstrated.
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