Abstract
ABSTRACTWe report the highly reflecting (>99.9%) In0.53Al0.14Ga0.33As/In0.52Al0.48As 30.5 pairs distributed Bragg reflector (DBR) and the In0.53Ga0.47As/ In0.52Al0.48As active cavity layer grown at high temperature by low pressure metal organic chemical vapor deposition with in-situ double beam laser reflectometry. One of the laser wavelengths selected for in-situ measurement was same as the DBR wavelength. The growth temperature was 750 °C. Good surface morphology of the multi-layer stacks was achieved by the temperature ramping of the InP buffer layer at the beginning of a multi-layer stacks. The width of stop band edge of the DBR reflectivity spectrum was found to be 1000Å.
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