15 kV IGBTs in 4H-SiC

Abstract

The latest developments in ultra high voltage 4H-SiC IGBTs are presented. A 4H-SiC P-IGBT, with a chip size of 8.4 mm x 8.4 mm and an active area of 0.32 cm2, which is double the active area of the previously reported devices [1], exhibited a blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 41 mΩ-cm2 with a gate bias of -20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 17 kV, and demonstrated a room temperature differential specific on-resistance of 25.6 mΩ-cm2 with a gate bias of 20 V. Field-Stop buffer layer design was used to control the charge injection from the backside. A comparison between N- and P- IGBTs, and the effects of different buffer designs, are presented.