Abstract
Atomic layer deposition (ALD) is an advanced tool for manufacturing thin films with precise control over thickness at the atomic scale. Differing from the conventional chemical vapor deposition, ALD relies on the sequential use of gas-phase precursors reacting with the active sites on substrate in a self-limiting manner. This allows ALD to offer excellent uniformity in the thin films, ease of tunability, and exceptional conformality on the high-aspect ratio geometries. Ideally, the ALD technique is preferred for the growth of ferrites nanostructured thin, conformal, and smooth films for spintronics, magnetic storage and sensing, giant magnetoresistance devices, and microwave applications. In this chapter, we present an introduction to ALD and different processes related to it such as thermal ALD, plasma ALD, and metal ALD. We also demonstrate its application for the deposition of various ferrites with MFe2O4 composition (M = Cu, Zn, Fe, Co, Bi, etc.) and the advances offered by ALD on the growth of ferrites.
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