Abstract

CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching, the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n/sup +/-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised.

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