重离子在14-nm FinFET SRAM器件引起的单粒子翻转

Abstract

The characteristic of single-event upset(SEU) in a 14-nm bulk fin field-effect transistor (FinFET) static random access memory(SRAM) is investigated by heavy-ion experiments. The linear energy transfer(LET) threshold 0.1 MeV/(mg/cm2) is obtained by fitting the SEU cross-section using the Weibull function. The contribution of multiple-bit upset(MBU) is investigated. The results show that when the LET is equal to 40.3 MeV/(mg/cm2), greater than 95% of SEU comes from the MBU. Additionally, the SEU cross-section of the FinFET SRAM presents anisotropies for incident angles associated with the fin direction. This research has a certain kind of guiding role in designing of radiation-hardened complementary metal-oxide semiconductor(CMOS) integrated circuits(ICs) based on FinFET technology.