Abstract
Magneto- and piezo-spectroscopy of high quality bulk samples have been used to clarify the origin of the characteristic, V1, V2 and V3 luminescence lines observed in 6 H - SiC polytypes, correspondingly, at 1.433, 1.398, and 1.368 eV. The uniaxial stress, up to 500 MPa, was applied along [11-20] and [10-10] directions, perpendicular to the c -axis of the investigated 6 H - SiC crystals. Magnetic field was applied in different directions with respect to the c -axis. The obtained results allow us to analyze in detail the symmetry of the initial and final states responsible for the V2 emission line. This analysis leads to a conclusion which contradicts the existing identification of the defect responsible for this characteristic emission.
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